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Total result(s) found: 3
  • ​K. Lorenz, I.S. Roqan, N. Franco, K. P. O’Donnell, V. Darakchieva, E. Alves, C.Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova, “Eu Doping of Zincblende GaN by Ion Implantation” J Appl. Phys. 105, 113507 (2009).
Keywords:
III-V semiconductors, Rutherford backscattering, X-ray diffraction, cathodoluminescence, europium, gallium compounds, ion implantation, lattice constants, wide band gap semiconductors
  • ​I.S. Roqan, K.P. O’Donnell, C. Trager-Cowan, V. Matias, A. Vantomme, ”Optical and Structural Properties of Eu-implanted InxAl1-xN” J. Appl. Phys.106, 083508 (2009)
Keywords:
Photoluminescence, III-V semiconductors, Ion implantation, Linewidths, Rutherford backscattering
  • K Lorenz, N P Barradas, E Alves, I S Roqan, E Nogales, R W Martin, K. P. O’Donnell, F. Gloux and P Ruterana, Structural and optical characterization of Eu-implanted GaN, J. Phys. D: Appl. Phys. 42,165103 (2009).
Keywords:
ion implantation, excitation mechanism, europium, luminescence, photoluminescence, gallium nitride, photoluminescence/excitation , PL/E, spectroscopy, Eu-implanted GaN , Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics