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Total result(s) found: 2
  • K. Lorenz, E. Alves, I. S. Roqan, K. P. O’Donnell, A. Nishikawa, Y. Fujiwara, and M. Boćkowski, Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy, Appl. Phys. Lett. 97, 111911(2010).
Keywords:
Photoluminescence, Doping, Light emitting diodes, III-V semiconductors
  • Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Edwards, P.R. and Song, S.F. and Vantomme, A. and Lorenz, K. and Alves, E. and Boćkowski, M. (2010) Identification of the prime optical center in GaN:Eu3+. Physical Review B, 81 (1). 085209. ISSN 10
Keywords:
optics, GaN, Eu3+, Physics