Current Research

AlGaN alloys have a direct interband energy transition gap ranging from 3.4eV (GaN) to 6.2eV (AlN). This property of AlGaN based materials positions them among the most promising materials; as they can offer an impressive array of potential applications in the biomedical sphere, e.g. in UV germicidal irradiation (260 nm) and skin therapy (300nm).​
​Several researchers have intensively studied nonpolar or semi-polar III-nitrides to reduce the polarization-induced electric field in nitride based LEDs in order to suppress the quantum confined Strack effect. Therefore, this led researchers to investigate valence band mixing due to an inclination of the substrates, which can change the polarization characteristics of III nitrides by investigating the optical polarization properties.​​
ZnO is a highly promising material for advanced optoelectronic and spin based electronic devices (spintronics). It has interesting properties such as wide band gap at room temperature, high excitation binding energy and the availability of lattice-matched substrates. We are currently studying rare earth elements, such as Gd and doped ZnO thin films prepared by pulsed laser deposition and characterize their structure, magnetic and physical properties.​ ​
​Zinc oxide (ZnO) is one of the promising materials for many potential applications; e.g. sensors, solar and optelectronic devices. ZnO is a direct wide band gap (3.37 eV) semiconductor. It is also known as piezoelectric material with potential properties for sensing applications. Its high exciton binding energy of 60 meV makes it a promising photonic material for devices operating at room temperature.​