Conferences that contributed by our SMS group

Invited Speaker

 

  1. “Carrier dynamics of III-Nitride devices through time-resolved spectroscopy analysis via defect emissions” Iman S Roqan, KAUST-Asia Wide Bandgap, Semiconductor Workshop, KAUST (November 28th, 2019)

     

  2. “Solution-processed quantum dots for flexible optoelectronics” Iman S Roqan, EMN -flexible-electronics, Dubrovnik, Croatia (Conference,21 Oct 2019)

     

  3. “Invention in semiconductor devices” Iman S Roqan, IEEE Women in Engineering, 10th IEEE-GCC Conference & Exhibition, Kuwait, Kuwait (Conference,19-23 April, 2019).

     

  4. The first GCC inventors forum, Dubai, Emirates (Conference, 3rd May, 2019).

     

  5. “III-nitrides vertical light emitting devices grown on (-201) b-Ga2O3” Interphotonics conference, Antalya, Turkey (Conference, 8-12 October (2018).

     

  6. “Broadband Perovskite/ZnO nanorods photodetectors achieved via inter/intra transitions fabricated on a metal substrate” The 3rd International Symposium on Nanoparticles-Nanomaterials and Applications (3rd ISN2A-2018), the Faculty of Science and Technology, New University of Lisbon (FCT-UNL), 2018, Caparica, Portugal (Conference, 22nd – 25th January 2018).

     

  7. Potential LED applications based on III-nitrides grown on emerging (-201)-oriented Ga2O3 substrates” Iman S Roqan, The international workshop on advanced materials and device technology, Anna University, Chennai, India (Conference,21-24 November 2017)

     

  8. “High brightness Blue-Light-Emitting Diode based on high optical and structural quality Gd doped ZnO-nanotube array grown on p-GaN” Iman S Roqan EMN Epitaxy, Barcelona, Spain (Conference,September 11-14, 2017)

     

  9. “High efficiency Deep UV LEDs grown on AlN substrates” Iman S Roqan EMN photonics, Budapest, Hungary (Conference,September 3-6, 2017)

     

  10. “High optical quality p-GaN/n-GdZnO nanotubes -based UV/Blue-Light-Emitting Diode for spintronic devices: Spin LED” Iman S Roqan, World Congress on Laser Optics & Photonics, Valencia, Spain (Conference,June 19-21, 2017).

     

  11. “III-nitride quantum wells on conductive, transparent (-201)-oriented β-Ga2O3, for high efficiency vertical light-emitting devices” Iman S Roqan, EMN photonics, Barcelona, Spain (Conference,September 2016).

     

  12. “Metal-Oxide Nanostructure on Conductive Flexible Substrate for Large-Scale Optoelectronics”, Iman S Roqan, Nano Science and technology, Singapore (Conference,October 26-28, 2016)

     

  13. “Catalyst-free Homogeneous High-quality ZnO Nanowires and Nanotubes” Iman S Roqan, BIT’s 2nd Annual World Congress of Smart Materials-2016 (March 2016) Singapore. Conference.

     

  14. “High efficiency GaN grown on Ga2O3” Iman S Roqan, SPIE Photonic West (Feb. 2015) San Francesco, USA. (SPIE Photonic conference is an important conference in optoelectronic and photonic field) Conference

     

  15. “High optical quality InGaN grown on Ga2O3 Iman S Roqan, Spain EMN Energy Material Nanotechnology (Sept. 2015), Sebastian, Spain. Conference

     

  16. LEDs for energy-efficient lighting” Iman S Roqan, International Summer School, Women in Optics Workshop: The Castle Meeting (Aug. 2015), Ebsdorfergrund, Germany. Conference

     

  17. “Novel vertically aligned ZnO nanorods grown on Gd nanolayer” Iman S Roqan, Energy Material Nanotechnology (July 2015) Istanbul, Turkey. Conference

     

  18. “Careers in Chemistry: What Can I Do with a PhD? (Q/A Panel Discussion)” Iman Roqan and Dhaval Shah, KAUST Research Conference: Applied Functional Materials Chemistry (2014), Saudi Arabia. Conference

     

  19. “Gd doped ZnO for optoelectronic and spintronic applications” Iman S Roqan, International Conference on Science and Engineering of Materials (Jan. 2014) Greater Noida, India. Conference

     

  20. “Ferromagnetism in Gd Doped ZnO” Iman S Roqan, International Conference on Advanced Materials, Science and Engineering (Jun. 2012), Colombo, Sri Lanka.  Conference

     

  21. “Strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes” Iman S Roqan, BIT's 2nd Annual World Congress of Advanced Materials (June 2013), Suzhou, China. Conference

     

  22. “Rare earth doped GaN” Iman S Roqan, The UK India Education and Research Initiative (UKIERI) workshop (July 2011), City University London, London, UK. Conference

     

  23. “Eu doped GaN annealed at high nitrogen pressure for red LEDs” Iman S Roqan, Katharina Lorenz and Kevin P O’Donnell, IEEE photonics workshop (2011), KAUST, Thuwal, Saudi Arabia. Conference

     



    Refereed Conference Presentations

     

    Postdoc and students are underlined who I supervise

     

  24. “Enhanced Deep Ultraviolet Self-powered Photodetector Based on n-Sn-doped ?-Ga2O3 Nano-flake/p-MnO Quantum Dots” Norah Alwadai, Ulrich Buttner, Somak Mitra, Bin Xin and Iman S. Roqan, the European Materials Research Society (E-MRS), Warsaw, Poland, September 2019.
  25. “Indirect bandgap CsPbX3 nanocrystals -based X-ray detectors with negligible visible/UV light interference noise” Bin XinNaresh Alaal, Somak Mitra, Ahmad Subahi, Yusin Pak, Norah Alwadai, Iman S. Roqan, the European Materials Research Society (E-MRS), Warsaw, Poland, September 2019.
  26. “Electronic Properties of Edge-Functionalized Zigzag GaN Nanoribbons—A First-Principles Study” Naresh Alaal and Iman Roqan, The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), was hosted in Bellevue, Washington, Seattle’s Eastside, July 2019.
  27. “Dislocation-Free and Catalyst-Free GaN Nanowires Grown on Si and Other Substrates by Pulsed Laser Deposition Without a Catalyst for Highly Efficient Devices” Dhaifallah AlmalawiIman S Roqan, The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), was hosted in Bellevue, Washington, Seattle’s Eastside, July 2019.
  28. “Carrier dynamics in enhanced MQW light emitting diode structures via V-pits” Idris Ajia, Zhiqiang Liu, Paul Edwards, Robert W Martin, and Iman S Roqan. The 9th Asia-Pacific Workshop on Wide gap Semiconductors (APWS2019), Okinawa, Japan, November 2019.
  29. “Enhanced III-Nitride Quantum Wells Grown on Conductive, Transparent (-201)- ß-Ga2 O3 , for High Efficiency Vertical Visible and UV Light-Emitting Devices”. Iman Roqan and Akito Kuramata the 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3), Ohio, USA, August 2019. 
  30. “Enhanced DUV Solar-Blind Self-Powered Photodetector Based on Novel ZnO Quantum Dot/ CuO Micro-Pyramid p−n Junction” N. Alwadai, S. Mitra,  M. N. Hedhili, H. Alamoudi, B. Xin, and Iman S. Roqan, The 4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV), Ioffe, Russia, September (2019).
  31. “Solution Processed Self-Powered Solar-Blind Photodetector by Amorphous Core-Shell Gallium Oxide Nanoparticles” S. Mitra, D.R. AlmalawiY. Pak, N. Wehbe, I.S. Roqan, The 4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV), Ioffe, Russia, September (2019).
  32. “Modification of electronic properties of GaN monolayer by group III− VI dopants: A first-principles study” Naresh Alaal, Iman Roqan, Bulletin of the American Physical Society, American Physics Society (APS), March Meeting, Boston, USA, March 2019.
  33. “Electronic properties of chemically functionalized armchair GaN nanoribbons: A computational study” Naresh Alaal, Iman Roqan, Bulletin of the American Physical Society, American Physics Society (APS), March Meeting, Boston, USA, March 2019.
  34. “Solution-Processed Metal-Oxide Quantum Dots for High-Performance Flexible Deep-UV Photodetectors” Somak Mitra and Iman S Roqan, EMRS Spring Strasbourg (France), (June 2018).
  35. “High-performance UV−to−IR Broadband Perovskite/ZnO nanorods Photodetectors Achieved via Inter-/Intra-band Transitions.” Norah M. Alwadai, Md Azimul Haque, Soma k Mitra, Tahani Flemban, Yusin Pak, Tom Wu, and Iman Roqan, Oral presentation at European Materials Research Society via EMRS Spring, Strasbourg (France), June 2018.
  36. “Enhanced Performance of MoS2 Photodetectors by Inserting a ALD-Processed TiO2 Interlayer” Iman S Roqan and Yusin Pak, EMRS Spring (June 2018).
  37. "Broadband Perovskite/ZnO nanorods photodetectors fabricated on a metal substrate" Iman Roqan, Norah M. Alwadai Som ak Mitra, Tahani Flemban, Yusin Pak IWZnO, Poland, Warsaw, 14 September 2018.
  38. “Metal-oxide Nanoparticles for High-performance Deep UV Photo-detection” Somak Mitra, K. Loganathan ,  A. Aravindh, G. Das, Y. Pak, I. Ajia, E. D. Fabrizio, and Iman S. Roqan, the International Workshop on UV Materials and Devices, (IWUMD), Japan (November 2017)

     

  39. “Fabrication of a high brightness UV-Blue Light-Emitting Diode based on high quality Gd doped ZnO-nanotube array grown on p-GaN” Norah Alwadai, Tahani Felemban, Somak MitraIdris ajia, Mufasila Mumthazmuhammed, Bilal Janjua, Boon Ooi, and Iman S Roqan, International Symposium on Semiconductor Light Emitting Devices, ISSLED, Banff, Canada (October 2017)

     

  40.  “Optical and structural properties of GaN nanowires grown by pulsed laser deposition on different substrates without catalyst” Dhaifallah R Almalawi,  M. M. Muhammed, I. A. Ajia, K. Lorenz, I. S. Roqan, 12th International Conference on Nitride Semiconductors, Strasburg, France (June 2017)

     

  41. “High Efficiency InGaN-Based Vertical Light-Emitting Diodes on β-Ga2O3 substrate for high-power and reliable applications” Mufasila M MuhammedNorah Al-Wadie and Iman S Roqan12th International Conference on Nitride Semiconductors, Strasburg, France (June 2017)

     

  42. “Comprehensive optical and structural Study of Highly Efficient AlGaN/AlGaN MQWs Grown on AlN” Idris Ajia, Zhiqiang Liu and Iman Roqan, , 12th International Conference on Nitride Semiconductors, Strasburg, France (June 2017)

     

  43. “Ab initio investigations of a InGaN  Grain boundary in presence of other defects” Assa Assa Aravindh S and I. S. Roqan, 12th International Conference on Nitride Semiconductors, Strasburg, France (June 2017)

     

  44. “Fabrication of high brightness UV-Blue Light-Emitting Diode based on high quality Gd doped ZnO-nanotube array grown on p-GaN” Norah AlwadeiSoma k Mitra, Idris Ajia, Mufasila M Mohammed, I. S. Roqan accepted as oral, Spring EMRS, Strasburg, France (May 2017)

     

  45. “High performance UV photodetector based on ZnO nanotubes grown on p-Si substrate” Tahani Flemban, Idris Ajia,  Norah Alwadai, Md Azimul Haque, Tom Wu, and Iman Roqan, accepted as oral, Spring EMRS, Strasburg, France (May 2017)

     

  46. “Improved Radiative Recombination of GaN/AlGaN MWQ grown on β-Ga2O3 Substrate” Idris Ajia, Jian Xu, I. S Roqan, International Workshop on Nitride Semiconductors-2016, Orlando, USA (Oct. 2016).
  47. “Carrier Dynamics of High-quality InGaN/GaN Quantum Wells Grown on (-201) β-Ga2O3 Substrates for Vertical Devices by Time-resolved Photoluminescence" Mufasil a M. Muhummed, Jian Xu, I. S Roqan, International Workshop on Nitride Semiconductors-2016, Orlando, USA (Oct. 2016).

     

  48. Ab initio investigations on defect mediated magnetism in GaN nanowires” Assa Assa Aravindh S and I. S. Roqan, International Workshop on Nitride Semiconductors-2016, Orlando, USA (Oct. 2016).

     

  49. Ab initio investigations on the structural and electronic properties of GaN in the presence of a 45grain boundary” Assa Assa Aravindh S and I. S. Roqan, International Workshop on Nitride Semiconductors-2016, Orlando, USA (Oct. 2016).

     

  50. “Structural, magnetic and electronic properties of GaN nanowires: An ab initio study” Assa Aravindh S and I. S. Roqan, MRS Fall 2016, Boston, USA.

     

  51. “Structural, magnetic and electronic properties of NdN thin films: A first principles study” Assa Aravindh S and I. S. Roqan, MRS Fall 2016, Boston, USA.

     

  52. “Optoelectronic properties of Gd doped ZnO Nanotube/p-GaN Heterojunction Light Emitting Diodes” Norah Alwadei, Mufasila M Muhammed, Tahani Flemban, Somak Mitra, Idris Ajia, I. S. Roqan, MRS Fall 2016, Boston, USA.

     

  53. “Optical and electrical properties of Gd doped ZnO nanostructures grown on aluminum foil for inexpensive large-scale flexible devices” Norah AlwadeiSoma k Mitra, Tahani FlembanI. S. Roqan, MRS Fall 2016, Boston, USA.

     

  54. “High quality ZnO nanotube on conductive substrate by pulsed laser deposition” Tahani H FlembanI. S. Roqan, 17th International Conference on II-VI Compounds and Related Materials, 13-18 Sep 2015 Paris (France)

     

  55. “Homogeneous vertical ZnO nanorod arrays on in-situ conductive Gd nanolayer”, Tahani H FlembanVenkates h Singaravelu, S. Assa AravindhI. S. Roqan, 17th International Conference on II-VI Compounds and Related Materials, 13-18 Sep 2015 Paris (France)

     

  56. “High optical and structural quality III-Nitrides quantum well grown on (-201) oriented β-Ga2O3” Mufasila M. Muhammed, Suman-Lata Sahonta, Colin J Humphreys and I. S. Roqan, MRS Fall 2015, Boston, USA (Oral presentation)

     

  57. “Temporal and Optical Response of Bright Blue (InGaN/GaN) Multi-Quantum-Well LEDs” Idris Ajia, Jianchang Yan, Zhiqiang Liu and I. S. Roqan, MRS Fall 2015, November 29-December 4, Boston, USA (Oral presentation)

     

  58. “Optical Characterization of Bright Blue (InGaN/GaN) Multi-quantum Wells”, Idris Ajia, Z. Liu, J.C. Yan, and I. S. Roqan, the 11th International Conference on Nitride Semiconductors (ICNS-11), August 30- September 4, 2015, Beijing, China.

     

  59. “High Optical and Structural Quality InGaN/GaN Single and Multiple Quantum Well Grown on (-201) Oriented -Ga2O3Mufasila Mumthaz Muhammed and I. S. Roqan, the 11th International Conference on Nitride Semiconductors (ICNS-11), August 30- September 4, 2015, Beijing, China.

     

  60. “High optical and structural quality InGaN/GaN single an multiple quantum well grown on (-201) oriented β-Ga2O3” Mufasila M. Muhammed and I. S. Roqan, the 11th International Conference on Nitride Semiconductors (ICNS-11), August 30- September 4, 2015, Beijing, China.

     

  61.  “Grain Boundaries and Their Effect on the Optical Properties of Deep UV AlGaN/AlGaN MQWs”, Idris Ajia, P. Edwards, J. Yan, Z. Liu, R. Martin, I. S. Roqan, MRS Fall 2014, Boston, USA (Oral presentation).

     

  62. “Optical and Structural Characterization of MOCVD Grown GaN Epilayers on &beta Ga2O3 Substrate” M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, MRS Fall 2014, Boston, USA (Oral presentation).

     

  63. “Impurity-defect band mediated ferromagnetism in Gd doped ZnO thin films” S. Venkatesh, P. K. Petrov, M. P. Ryan, and N. M. Alford, I.S. Roqan, MRS Fall 2014, Boston, USA.

     

  64. “First principles analysis of the atomic structure and defects in a ZnO grain boundary” Assa Aravindh S and I. S. Roqan, MRS Fall 2014, Boston, USA.

     

  65. “Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering” M. Baseer Haider, Mohammad F. Al-Kuhaili, and S. M. A. Durrani, S. Venkatesh , and I S Roqan, MRS Fall 2014, Boston, USA.

     

  66. “Effect of Oxygen on Photoluminescence and Magnetic Properties of Band Gap-Engineered MgZnO Thin Films Obtained by Pulse Laser Deposition” Ansar Masood, S. Venkatesh, Mufasila M Muhammed, Anastasia Riazanova, Lyuba Belova, I. S. Roqan, K. V Rao, MRS Fall 2014, Boston, USA.

     

  67. “Synthesis of Vertically Well aligned Gd Doped ZnO Nanowires Grown on Sapphire by Conventional Pulsed Laser Deposition without Catalyst” T. H. FelembanS. VenkateshI. S. Roqan, 8th International Workshop on Zinc Oxide and Related Materials (IWZnO 2014), Ontario, Canada. 

     

  68. “Long-range ferromagnetism from Gd doped ZnO” I. S. Roqan, S. Venkatesh, Z. Zhang, S. Hussain, I. Bantounas, J. B. Franklin, T. H. Felemban, B. Zou, J.-S. Lee, P. K. Petrov, M. P. Ryan, and N. M. Alford, 8th International Workshop on Zinc Oxide and Related Materials (IWZnO 2014), Ontario, Canada (Oral presentation).

     

  69. “First-principles study of defect complexes in Gd-doped wurtzite ZnO” Z. Zhang and I. S. Roqan, a symposium on structure-property relationships in solid state materials, 2014, in Qingdao, China (Oral presentation).

     

  70. “The High Internal Quantum Efficiency of GaN epilayers grown on Ga2O3” Mufasila M. Muhammed, Idris A. Ajia , Akito Kuramata, and I. S. Roqan E-MRS Spring, Lille, France, 2014

     

  71. “Structural and electronic properties of Gd doped ZnO nanowires: A first principles study” Assa Aravindh SUdo Schwingenschlogl,  I. S. Roqan, E-MRS Spring, Lille, France, 2014.

     

  72. “Epitaxial (0001) GaN deposited on (-201) Ga2O3” M. Peres, M. Felizardo, N. Franco, E. Alves, M. M. Muhammed, Akito Kuramata, Yoshikatsu Morishima, Yoshiyuki Yamashita, K. Lorenz, I. S. Roqan, XIII European Vacuum Conference 2014, Aveiro, Portugal.

     

  73. “Induced Energy Anisotropy by a Small Miscut in Strained (InxGa1-xN/GaN) Epilayers Grown on c-plane Sapphire” I. S. RoqanY. Basma, I. Ajia, K. Lorenz, K. P. O’Donnell, ICNS 10, Washington, USA 2013.

     

  74.  “Sequential multiple-step europium ion implantation and annealing of GaN”,  S. M. C. Miranda, P. R. Edwards, K. P. O'Donnell, M. Boćkowski, E. Alves, I. S. Roqan, A. Vantomme and K. Lorenz, E-MRS 2013 Spring Meeting (Oral presentation)

     

  75. “Grain Size effect on the Optical Properties of AlGaN/AlGaN” Idris Ajia, P. R. Edwards, Z. Liu, R. W. Martin, J. Chang, I. S. Roqan, European Workshop on Heterostructure Technology 2013, Glasgow, UK (Oral presentation).

     

  76. “In-situ Analysis of Corrosion Inhibitors using a Portable Mass Spectrometer with Paper Spray Ionization” Fred. P. M. Jjunju, Anyin Li, Abraham Badu-Tawiah, Pu Wei, I. S. Roqan and R. Graham Cooks61th American Society of Mass Spectrometry (ASMS) Conference on Mass Spectrometry and Applied Topics 2013, Minneapolis MN, USA (Oral presentation).

     

  77. “In-situ Analysis of Corrosion Inhibitors using Paper Spray Ionization” Fred. P. M. Jjunju, Anyin Li, Abraham Badu-Tawiah, Pu Wei, I. S. Roqan and R. Graham Cooks, Chemistry in the Oil Industry XIII, Oilfield – New Frontiers Symposium 2013, Manchester, UK (Oral presentation)

     

  78. “Origin of Superparamagnetism in MnZnO Thin Films” S. VenkateshAbdulaziz Baraz, I. S. Roqan, MRS Fall, 2013, Boston (Oral presentation).

     

  79. Best paper award “The Effects of Grain Size on the Optical Properties on AlxGa1-x N/AlyGa1-yN MQW” Idris Ajia, P. R. Edwards, Z. Liu, R. W. Martin, J. Chang, I. S. Roqan, MRS Fall, 2013, Boston, USA.

     

  80. “The Influence of Point Defects on the Optical and Magnetic Properties of Gd-Doped ZnO Thin-Films” Tahani H FlembanVenkatesh Singaravelu, Udo Schwingenschlogl, Joseph Franklin, Mary Ryan, Martyn McLachlan, Neil Alford, I. S. Roqan, MRS Fall 2013, Boston, USA.

     

  81. “Microstructure, Magnetic and Transport Properties of Gd Doped ZnO Thin Films” S. Venkatesh, Franlin B Joseph, Mary P Ryan, Martyn A. McLachlan, Neil M. Alford, Jun-Sik Lee, I. S. Roqan, MRS Fall 2013, Boston, USA (Oral presentation).

     

  82. “The Ferromagnetism of Diluted Zn1-xGdxO (x = 0.04 to 1 at%) Thin Films” I. S. RoqanS. Venkatesh , S.  Hussai n, Ioannis  Bantounas, U.  Schwingenschlogl, M.  Yousefi, J.  Franklin, Mary P. Ryan, M.  A  McLachlan, N.  M.  Alford, MRS Fall meeting 2012, Boston, USA (Oral presentation).

     

  83. “Effect of Gd doping on the magnetic and transport properties of ZnO thin films” I. S. RoqanS. Venkatesh, Mahdieh Yousefi, and Neil Alford, International Workshop of ZnO (IWZNO 2012), Nice France.

     

  84. “Lineshape Engineering in an All-Pass Ring Resonator with Backreflection Coupled to a Symmetrical Fabry–Perot Resonator” Vasily A. Melnikov and I. S. Roqan, Latin America Optics and Photonics Technical Digest (2012), Brazil (oral presentation)

     

  85. “Optical Anisotropy from strained (InxGa1-xN/GaN) films grown on c-plane sapphire” Yousef Basma, S.M.C. Miranda, N. Franco, E, Alves, K. Lorenz, Kevin O’Donnell, I. S. Roqan, International Workshop of Nitrides (IWN 2012), Sapporo, Japan.

     

  86. “Magnetic properties of diluted magnetic Zn1-xGdxO (x = 0.005, 0.01 and 0.5) ZnO thin film” S. Venkatesh, Mahdieh Yousefi, Neil Alford and I. S. Roqan, MRS Spring Meeting 2012, San Francisco, USA (Oral presentation).

     

  87. “An ab- initio study on effect of Zn vacancies on the non-magnetic nature of Gd doped ZnO” I. Bantounas, U. Schwingenschlogl and I. S. Roqan, MRS Spring Meeting 2012 , San Francisco, USA.

     

    88.Jjunju, F. P. M. Badu-Tawiah, A. K., Li, Anyin, I. S. Roqan and Cooks, R. G., 60th, American Society of Mass Spectrometry (ASMS) Conference on Mass Spectrometry and Applied Topics (2012), Vancouver, Canada (Oral presentation).

     

    89.Jjunju, F. P. M. Badu-Tawiah, A. K., Li, Anyin, I. S. Roqan and Cooks, R. G., 244th American Chemical Society (ACS) National Meeting (2012), Philadelphia, Pennsylvania (Oral presentation).

     

    90.Jjunju, F. P. M. Badu-Tawiah, A. K., Li, Anyin, I. S. Roqan and Cooks, R. G., 19th International Mass Spectrometry Conference (IMSC), Kyoto, Japan. (September, 15 - 21 2012) and 3rd Asian and Oceanic Mass Spectrometry Conference (AOMSC-3), Kyoto, Japan (oral presentation).

     

  88. “Optical anisotropy from InGaN epilayer” Yousef Basma and I S Roqan, 4th International Symposium on Growth of III-Nitrides 2012, St Perersburg, Russia.

     

  89. Magnetic properties of Zn1-xGdxO (x = 0.005, 0.01 and 0.5) thin films” I. S. RoqanS. Venkatesh, Mahdieh Yousefi, Neil Alford, 2nd Saudi International Nanotechnology Conference 2012 (2SINC), Riyadh, Saudi Arabia.

     

  90. “Optical Anisotropy investigation from strained (InxGa1-xN/GaN) layers” Yousef Basma and I. S. Roqan, NSF-KAUST Solid State Lighting Workshop 2012, KAUST, Thuwal, Saudi Arabia.

     

  91. “Ab-initio studies on the magnetic behaviour of ZnO doped with Gd I. Bantounas, U. Schwingenschlogl and I. S. Roqan, NSF-KAUST Solid State Lighting Workshop 2012, KAUST, Thuwal, Saudi Arabia.

     

  92. “Resonance splitting in ring resonators” Vasily A. Melnikov, B.S. Ooi, I. S. Roqan, NSF-KAUST Solid State Lighting Workshop 2012, KAUST

     

  93. “High pressure annealing of Europium implanted GaN”  Katharina Lorenz,  S.M.C. Miranda, E. Alves,  E. J Jorge, I. S. Roqan, Kevin P. O'Donnell, Michał X. Boćkowski, SPIE Photonic West, the International Society for Optical Engineering: Gallium Nitride Materials and Devices VII 2012 San Francesco, USA (Oral presentation).

     

  94. “Energy transfer to optical centres in GaN:Eu: the role of defects” I. S Roqan, Katharina Lorenz and Eduardo Alves, Kevin P O’Donnell, 9th International Conference on Nitride Semiconductors (ICNS9 2011), Glasgow UK.

     

  95. “Gd-doped ZnO thin films grown by Pulsed Laser Deposition” Ioannis BantounasShamim a HussainI. S Roqan, E-MRS Spring 2010, Strasbourg, France .

     

  96. “Excitation of EuGa centres in GaN” K. P. O'Donnell, I.S. Roqan, R. W. Martin, P.R. Edwards, I.M. Watson,S.F. Song, A.Vantomme, K. Lorenz, E. Alves5, M. Boćkowski, UK Nitrides Consortium Conference 12th and 13th January 2010, Tyndall Institute, Cork, Ireland

     

     

  97. (Invited talk) "Rare Earth implantation of III-nitride semiconductors for light emission from IR to UV" K. Lorenz, E. Alves, F. Gloux, P. Ruterana, M. Peres, T. Monteiro, K. Wang, I. S. Roqan,  E. Nogales, R.W. Martin, K.P. O’Donnell. 16th International Conference on Ion Beam Modification of Materials (IBMM 2008), Dresden, Germany.

     

  98. “The Dependence of the Luminescence Efficiency of Eu-Implanted GaN on the Implantation Fluence and Post-Annealing Temperature.” I. S. Roqan, Kevin P O'Donnell, Carol Trager-Cowan, Katharina Lorenz, Eduardo Alves and Michal Bockowski, MRS Fall meeting 2008, Boston, USA (Oral).

     

  99. “Theoretical calculations of clustering tendencies in Tm-doped GaN” I S Roqan and Ben Hourahine, UK Nitrides Consortium (UKNC) workshops 2008.

     

  100.  “Blue cathodoluminescence from thulium implanted AlGaN and InAlN”, I. S. Roqan, K. Lorenz, K. P. O’Donnell, C. Trager-Cowan, R. W. Martin, I. M. Watson, E. Alves. E-MRS Spring meeting 2006, Nice, France.

     

  101. “Comparative studies of Eu implanted Cubic and Wurzite GaN” I. S. Roqan, K.P. O’Donnell, K. Lorenz, C. Trager-Cowan, M. Panfilova, D.J. As, I.M. Watson, E. Alves. Presented at MRS Fall meeting 2006, Boston, USA.

     

  102. “Rare Earth Doping of III-Nitride Alloys by Ion Implantation” K. Lorenz, E. Alves, T. Monteiro, M. J. Soares, A. Cruz, I. S. Roqan, K. Wang, E. Nogales, R. W. Martin, C. Trager-Cowan, K. P. O’Donnell, I. M. Watson, 2nd Workshop on “Impurity Based Electroluminescent Devices and Materials” (IBEDM 2006), Wakayama, Japan, October 17-20, (2006) 

     

  103. “Effect of the substrate temperature during implantation of Eu in GaN” V. Matias, A. Vantomme, I S Roqan, R W Martin, K P O’Donnell, 14th International Conference on Ion Beam Modification of Materials (IBMM 2006), Taormina, Italy, 18-22 Sept. (2006).

     

  104. “The influence of growth temperature on the optical and structure properties of Tm doped MBE GaN” I. S. Roqan, E. Nogales, K.P. O’Donnell, P.R. Edwards, R.W. Martin, C. Trager Cowan, G. Halambalakis, O. Briot. Presented at E-MRS Spring meeting 2005, Strasbourg, France.

     

  105. “Characterization of the blue emission of Tm/Er co-implanted GaN” I. S. Roqan, C. Trager-Cowan, B. Hourahine, K. Lorenz, E. Nogales, K.P. O’Donnell, R.W. Martin, E. Alves, S. Ruffenach, O. Briot. Presented at MRS Fall meeting 2005, Boston, USA.