2009

2009

Eu Doping of Zincblende GaN by Ion Implantation

Year: 2009

Authors: K. Lorenz, Iman Salem Roqan, N. Franco, K.P. O’Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova

III-V semiconductors
Rutherford backscattering
X-Ray Diffraction
Cathodoluminescence
Europium
gallium compounds
Ion Implantation
Lattice constants
wide band gap semiconductors

Optical and Structural Properties of Eu-implanted InxAl1-xN

Year: 2009

Authors: I.S. Roqan, K.P. O’Donnell, C. Trager-Cowan, V. Matias, A. Vantomme

Photoluminescence
III-V semiconductors
Ion Implantation
Linewidths
Rutherford backscattering

Structural and Optical Characterization of Eu-implanted GaN

Year: 2009

Authors: K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski

Ion Implantation
Excitation Mechanism
Europium
Luminescence
Photoluminescence
Gallium Nitride
Photoluminescence/Excitation
PL/E
Spectroscopy
Eu-Implanted Gan
Physics
Electronic
Optical and Magnetic Materials
Atomic and Molecular Physics