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Semiconductor and Material Spectroscopy Laboratory
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2009

  1. Publications
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Eu Doping of Zincblende GaN by Ion Implantation
Year: 2009
Authors: K. Lorenz, Iman Salem Roqan, N. Franco, K.P. O’Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova
  • III-V semiconductors
  • Rutherford backscattering
  • X-Ray Diffraction
  • Cathodoluminescence
  • Europium
  • gallium compounds
  • Ion Implantation
  • Lattice constants
  • wide band gap semiconductors
Optical and Structural Properties of Eu-implanted InxAl1-xN
Year: 2009
Authors: I.S. Roqan, K.P. O’Donnell, C. Trager-Cowan, V. Matias, A. Vantomme
  • Photoluminescence
  • III-V semiconductors
  • Ion Implantation
  • Linewidths
  • Rutherford backscattering
Structural and Optical Characterization of Eu-implanted GaN
Year: 2009
Authors: K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski
  • Ion Implantation
  • Excitation Mechanism
  • Europium
  • Luminescence
  • Photoluminescence
  • Gallium Nitride
  • Photoluminescence/Excitation
  • PL/E
  • Spectroscopy
  • Eu-Implanted Gan
  • Physics
  • Electronic
  • Optical and Magnetic Materials
  • Atomic and Molecular Physics
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