Strain-Engineering of Electronic and Magnetic Properties of Chemically Passivated Zigzag GaN Nanoribbons: An Ab Initio Study

Strain-Engineering of Electronic and Magnetic Properties of Chemically Passivated Zigzag GaN Nanoribbons: An Ab Initio Study

GaN micro structure

Opening for Post-doc Research Position

Opening for Post-doc Research Position: Nanofabrication for Optoelectronic Applications

Time-resolved of semiconductor

Time-resolved spectroscopy and advanced optical characterizations for wide bandgap semiconductors for deep UV and UV lig

Semiconductor / perovskite devices

High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions.

2D Perovskite

Double solvent evaporation inducing self-patterning.

Geometric structures of 2D GaN

Geometric structures of GaN monolayer substitutionally doped with a dopant at N-site (left) and Ga-site (right)

SEM for GaN

SEM for GaN nanostructure flower-magnified to 100,000 times.

Femtosecond-laser ablation

Femtosecond-laser ablated synthesis of quantum dots for deep-UV photodetector application

2D semiconductors for optoelectronic devices

2D semiconductors for optoelectronic devices

Overview

The Semiconductor and Material Spectroscopy (SMS) Laboratory was built in 2010 with state-of-the-art equipment as a part of the Physical Sciences and Engineering (PSE) Division at KAUST. It was the first laboratory in the country devoted to the spectroscopic studies of semiconductors.

Our research encompasses physical and materials engineering disciplines, from material characterization (mainly optical spectroscopy for nitrides), to material growth and device fabrication (including oxide nanostructures) for semiconductor lighting applications. In 2011, we started material fabrication for optoelectronic devices, including nitride and oxide nanostructures. While in 2015, we added device fabrication to our group activities.

SMS Lab contains specific and specialized facilities which enable the team to perform comprehensive studies. These facilities include;

  • Low Temperature Micro- Photoluminescence and Micro-Time-Resolved Spectroscopy
  • Integrated-Time Photoluminescence and Photoluminescence​ Excitation
  • Electroluminescence​
  • ​I-V and Photo Response Characterizations using different sources from UV to IR
  • Quantum Yields using an Integrated Sphere

Our research activities include;

  • III Nitride nanostructures for optoelectronic devices
  • Ultra-fast laser synthesis of inorganic semiconductor nanoparticle
  • Metal oxide and other II-VI semiconductor nanostructure for optoelectronic devices

In our group, we set collaboration related to wide band gap semiconductors mainly Zinc Oxide (ZnO) and III-Nitride materials for optoelectronic applications. We could set a link with different international institutes throughout the world to solve global problems related to environments using optical technology.