Strain engineering in the blue LED structure based on InGaN/GaN multiple quantum wells (MQWs) allows large V-pits initiated below superlattices (SLs).
Strain engineering in the blue LED structure based on InGaN/GaN multiple quantum wells (MQWs) allows large V-pits initiated below superlattices (SLs). V-pit sidewalls comprise MQWs and SLs, forming a sub-well that emits UV/blue, resulting in carrier repopulation, which enhances the optical efficiency. The illustration was produced by Hassan Tahini in collaboration with KAUST’s Research Communication.
Catalyst-free single-step growth strategy of high-quality self-assembled single-crystal vertical GaN nanowires grown on a wide range of common and novel substrate
Catalyst-free single-step growth strategy of high-quality self-assembled single-crystal vertical GaN nanowires grown on a wide range of common and novel substrate December 12, 2023
Opening for PhD students
PhD students in semiconductors and optical spectroscopy for optoelectronic devices.
The Division of Physical Science & Engineering at King Abdullah University of Science & Technology (KAUST) invites applications for PhD at the Semiconductors and Materials Spectroscopy (SMS) Laboratory, http://spectroscopy.kaust.edu.sa
Institution: Division of Physical Science & Engineering., King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi Arabia
Academic Field(s): Inorganic semiconductor devices for optoelectronics based on III-Nitride semiconductors (GaN, AlN and InN) and wide bandgap oxide nanostructure; Material growth; Optical spectroscopy (Time-resolved spectroscopy; Photoluminescence; Photoluminescence excitation; photo-excitation…etc); Electroluminescence (EL).
Description: Applications are invited for PhD, in a Semiconductors and Materials Spectroscopy (spectroscopy.kaust.edu.sa), led by Prof Iman Roqan’s group (iman.roqan@kaust.edu.sa ) within Physical Science and Engineering Division at KAUST, equipped with world-class laser facilities and advanced spectroscopic instrumentation: CW laser, ultrafast Ti:Sapphire laser attached to second/third harmonic generator and streak camera and the optical parametric oscillator (OPO). Our Semiconductor and Material Spectroscopy group investigate the optical properties of wide bandgap semiconductors based on GaN and related materials for light-emitting diode applications. Our group set collaborations with different international institutes throughout the world to solve global problems.
Further information can be found at spectroscopy.kaust.edu.sa.
Needed qualifications: A bachelor or master degree in a relevant discipline area: Physics, electric engineering, materials science and optoelectronics.
Further information: Please send your enquires to join our group through email. (asma.alwadai@kaust.edu.sa)
Strain-Engineering of Electronic and Magnetic Properties of Chemically Passivated Zigzag GaN Nanoribbons: An Ab Initio Study
Strain-Engineering of Electronic and Magnetic Properties of Chemically Passivated Zigzag GaN Nanoribbons: An Ab Initio Study
GaN micro structure
Time-resolved of semiconductor
Time-resolved spectroscopy and advanced optical characterizations for wide bandgap semiconductors for deep UV and UV lig
Semiconductor / perovskite devices
High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions.
2D Perovskite
Double solvent evaporation inducing self-patterning.
Geometric structures of 2D GaN
Geometric structures of GaN monolayer substitutionally doped with a dopant at N-site (left) and Ga-site (right)
SEM for GaN
SEM for GaN nanostructure flower-magnified to 100,000 times.
Femtosecond-laser ablation
Femtosecond-laser ablated synthesis of quantum dots for deep-UV photodetector application
2D semiconductors for optoelectronic devices
2D semiconductors for optoelectronic devices
Overview
The Semiconductor and Material Spectroscopy (SMS) Laboratory was built in 2010 with state-of-the-art equipment as a part of the Physical Sciences and Engineering (PSE) Division at KAUST. It was the first laboratory in the country devoted to the spectroscopic studies of semiconductors.
Our research encompasses physical and materials engineering disciplines, from material characterization (mainly optical spectroscopy for nitrides), to material growth and device fabrication (including oxide nanostructures) for semiconductor lighting applications. In 2011, we started material fabrication for optoelectronic devices, including nitride and oxide nanostructures. While in 2015, we added device fabrication to our group activities.
SMS Lab contains specific and specialized facilities which enable the team to perform comprehensive studies. These facilities include;
Our research activities include;
In our group, we set collaboration related to wide band gap semiconductors mainly Zinc Oxide (ZnO) and III-Nitride materials for optoelectronic applications. We could set a link with different international institutes throughout the world to solve global problems related to environments using optical technology.