Strain-Engineering of Electronic and Magnetic Properties of Chemically Passivated Zigzag GaN Nanoribbons: An Ab Initio Study
Strain-Engineering of Electronic and Magnetic Properties of Chemically Passivated Zigzag GaN Nanoribbons: An Ab Initio Study
GaN micro structure
Opening for Post-doc Research Position
Opening for Post-doc Research Position: Nanofabrication for Optoelectronic Applications
Time-resolved of semiconductor
Time-resolved spectroscopy and advanced optical characterizations for wide bandgap semiconductors for deep UV and UV lig
Semiconductor / perovskite devices
High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions.
2D Perovskite
Double solvent evaporation inducing self-patterning.
Geometric structures of 2D GaN
Geometric structures of GaN monolayer substitutionally doped with a dopant at N-site (left) and Ga-site (right)
SEM for GaN
SEM for GaN nanostructure flower-magnified to 100,000 times.
Femtosecond-laser ablation
Femtosecond-laser ablated synthesis of quantum dots for deep-UV photodetector application
2D semiconductors for optoelectronic devices
2D semiconductors for optoelectronic devices
Overview
The Semiconductor and Material Spectroscopy (SMS) Laboratory was built in 2010 with state-of-the-art equipment as a part of the Physical Sciences and Engineering (PSE) Division at KAUST. It was the first laboratory in the country devoted to the spectroscopic studies of semiconductors.
Our research encompasses physical and materials engineering disciplines, from material characterization (mainly optical spectroscopy for nitrides), to material growth and device fabrication (including oxide nanostructures) for semiconductor lighting applications. In 2011, we started material fabrication for optoelectronic devices, including nitride and oxide nanostructures. While in 2015, we added device fabrication to our group activities.
SMS Lab contains specific and specialized facilities which enable the team to perform comprehensive studies. These facilities include;
Our research activities include;
In our group, we set collaboration related to wide band gap semiconductors mainly Zinc Oxide (ZnO) and III-Nitride materials for optoelectronic applications. We could set a link with different international institutes throughout the world to solve global problems related to environments using optical technology.