support@kaust.edu.sa
+966 (12) 808-3463
  • العربية
logo-black
  • Home
  • People
    • Current
    • Alumni
  • Publications
    • 2021
    • 2020
    • 2019
    • 2018
    • 2017
    • 2016
    • 2015
    • 2014
    • 2013
    • 2012
    • 2011
    • 2010
    • 2009
  • Research
    • Current Research
  • Collaboration
  • News
  • Facilities
  • Join us
  • Contact us
  • Conferences
Semiconductor and Material Spectroscopy Laboratory
breadcrumb-bg

2010

  1. Publications
  • Clear filters
Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
Year: 2010
Authors: K. Lorenz, E. Alves, Iman Salem Roqan, K.P. O’Donnell, A. Nishikawa, Y. Fujiwara, M. Bockowski
  • Photoluminescence
  • Doping
  • Light emitting diodes
  • III-V semiconductors
Identification of the prime optical center in GaN:Eu3+
Year: 2010 ISSN:10
Authors: Jjunju, Fred.P.M., Abraham.K.Badu-Tawiah, Anyin Li, And R. Graham Cooks, Iman S Roqan
  • Optics
  • GaN
  • Eu3+
  • Physics
logo-white

"KAUST shall be a beacon for peace, hope and reconciliation, and shall serve the people of the Kingdom and the world."

King Abdullah bin Abdulaziz Al Saud, 1924 – 2015

Contact Us

  • +966 (12) 808 4340
  • Iman.roqan@kaust.edu.sa

  • 4700 King Abdullah University of Science and Technology

    Building 3, Level 3

    Thuwal 23955-6900

    Kingdom of Saudi Arabia

Quick links

  • Join us
  • Contact us

© King Abdullah University of Science and Technology. All rights reserved

Privacy Policy
Terms of Use
Loading...