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Semiconductor and Material Spectroscopy Laboratory
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2010

  1. Publications
  • Clear filters
Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
Year: 2010
Authors: K. Lorenz, E. Alves, Iman Salem Roqan, K.P. O’Donnell, A. Nishikawa, Y. Fujiwara, M. Bockowski
  • Photoluminescence
  • Doping
  • Light emitting diodes
  • III-V semiconductors
Identification of the prime optical center in GaN:Eu3+
Year: 2010 ISSN:10
Authors: Jjunju, Fred.P.M., Abraham.K.Badu-Tawiah, Anyin Li, And R. Graham Cooks, Iman S Roqan
  • Optics
  • GaN
  • Eu3+
  • Physics
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