​The Semiconductor and material Spectroscopy (SMS) Lab contains specific and specialized equipment which enable the team to perform comprehensive studies.

Growth and Fabrication Techniques (FLAL)

Femtosecond-laser ablation in liquid (FLAL)

Growth and Fabrication Techniques (core lab)(PLD)

Pulsed Laser Deposition (PLD) for GaN nanowire growth

Structural techniques (Core lab)

Secondary Ion Mass Spectrometry(XPS) Imaging and Characterization Laboratory(KAUST)

Structural techniques (Core lab) (HR-TEM)

High resolution transmission electron microscopy (HR-TEM) and electron energy loss spectroscopy (EELS)

Structural techniques (Core lab) -(SIMS)

X-ray Photoelectron Spectroscopy (SIMS) Imaging and Characterization Laboratory(KAUST)

by Dr. Nimer Wehbe, Imaging and Characterization Laboratory(KAUST)

Structural techniques (Core lab) (FIB)

Focused Ion Beam (FIB) Imaging and Characterization Laboratory(KAUST)

Structural techniques (Core lab)(SEM)

Scanning electron microscopy (SEM) including energy dispersive x-ray (EDX)

Structural techniques (Core lab)- (XRD)

X-ray diffraction Imaging and Characterization Laboratory(KAUST)

Advanced Optical Characterization and carrier dynamics (TRPL)

Advanced Optical Characterization and carrier dynamics 1- Coherent Ti-Sapphire Ultra-fast Laser attached to Hamamatsu Streak Camera (with 2 ps resolution) Pulse Picker to extend our Scan to ns and ms. Second and Third generator to extend our excitation wavelength range to deep UV for Time resolved photoluminescence (TRPL)

Advanced Optical Characterization and carrier dynamics .

Optical Techniques

2- Temperature and power dependent Photoluminescence (PL) and micro-PL 3- Micro-PL and micro-TRPL (2μm resolution)

Electrical Techniques

Electrical Techniques

Current-voltage measurements (I-V) Electroluminescence (EL) Internal and External efficiency measurements

Low Temperature Micro- Photoluminescence and Micro-Time-Resolved Spectroscopy

Coherent Ti-Sapphire Ultra-fast Laser attached to Hamamatsu Streak Camera (with 2 ps resolution)
Pulse Picker to extend our Scan to ns and ms
Second and Third generator to extend our excitation wavelength range to deep UV

Integrated-Time Photoluminescence and Photoluminescence​ Excitation

​Steady​ State Fluorescence Spectrometer using CW Xe Lamp CW Ar Laser and CW He-Cd Laser as Excitation Sources (UV to near IR).
Low Temperature PL Setup.​

Device Characterization

Electroluminescence.
I-V and Photo Response Characterizations using different sources from UV to IR (224-1600 nm).​
Quantum Yields using an Integrated Sphere.​

KAUST Core Labs and Major Facilities

We are using different synthesis and fabrications methods and also perform structural​ and magnetic characterization in the core labs.​