The Semiconductor and material Spectroscopy (SMS) Lab contains specific and specialized equipment which enable the team to perform comprehensive studies.
Pulsed Laser Deposition (PLD) for GaN nanowire growth
Secondary Ion Mass Spectrometry(XPS) Imaging and Characterization Laboratory(KAUST)
High resolution transmission electron microscopy (HR-TEM) and electron energy loss spectroscopy (EELS)
X-ray Photoelectron Spectroscopy (SIMS) Imaging and Characterization Laboratory(KAUST)
by Dr. Nimer Wehbe, Imaging and Characterization Laboratory(KAUST)
Focused Ion Beam (FIB) Imaging and Characterization Laboratory(KAUST)
Scanning electron microscopy (SEM) including energy dispersive x-ray (EDX)
X-ray diffraction Imaging and Characterization Laboratory(KAUST)
Advanced Optical Characterization and carrier dynamics 1- Coherent Ti-Sapphire Ultra-fast Laser attached to Hamamatsu Streak Camera (with 2 ps resolution) Pulse Picker to extend our Scan to ns and ms. Second and Third generator to extend our excitation wavelength range to deep UV for Time resolved photoluminescence (TRPL)
2- Temperature and power dependent Photoluminescence (PL) and micro-PL 3- Micro-PL and micro-TRPL (2μm resolution)
Current-voltage measurements (I-V) Electroluminescence (EL) Internal and External efficiency measurements
Steady State Fluorescence Spectrometer using CW Xe Lamp CW Ar Laser and CW He-Cd Laser as Excitation Sources (UV to near IR).
Low Temperature PL Setup.
I-V and Photo Response Characterizations using different sources from UV to IR (224-1600 nm).
Quantum Yields using an Integrated Sphere.
We are using different synthesis and fabrications methods and also perform structural and magnetic characterization in the core labs.