support@kaust.edu.sa
+966 (12) 808-3463
  • العربية
logo-black
  • Home
  • People
    • Current
    • Alumni
  • Publications
    • 2021
    • 2020
    • 2019
    • 2018
    • 2017
    • 2016
    • 2015
    • 2014
    • 2013
    • 2012
    • 2011
    • 2010
    • 2009
  • Research
    • Current Research
  • Collaboration
  • News
  • Facilities
  • Join us
  • Contact us
  • Conferences
Semiconductor and Material Spectroscopy Laboratory
breadcrumb-bg

New substrate for potential high efficiency GaN materials

  1. Publications
  2. News

New substrate for potential high efficiency GaN materials

31 July, 2014

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, and I. S. Roqan, High optical and structural quality of GaN epilayers grown on (201) beta-Ga2O3, Applied Physics Letters 105, 042112, 2014.

Click here for more details!

  • Share this:

Archives List

  • June 2024 (2) x
  • May 2024 (1) x
  • December 2023 (1) x
  • November 2023 (1) x
  • May 2023 (3) x
  • March 2023 (1) x
  • February 2023 (1) x
  • August 2021 (1) x
  • February 2021 (1) x
  • January 2021 (5) x
  • December 2019 (1) x
  • October 2019 (1) x
  • September 2019 (1) x
  • January 2019 (2) x
  • February 2018 (1) x
  • November 2017 (1) x
  • February 2016 (1) x
  • October 2015 (1) x
  • September 2015 (1) x
  • August 2015 (1) x
  • February 2015 (1) x
  • November 2014 (1) x
  • September 2014 (2) x
  • August 2014 (1) x
  • July 2014 (1) x
  • January 2014 (1) x
  • May 2013 (1) x
  • March 2013 (1) x
  • November 2011 (1) x
logo-white

"KAUST shall be a beacon for peace, hope and reconciliation, and shall serve the people of the Kingdom and the world."

King Abdullah bin Abdulaziz Al Saud, 1924 – 2015

Contact Us

  • +966 (12) 808 4340
  • Iman.roqan@kaust.edu.sa
  • 4700 King Abdullah University of Science and Technology

    Building 3, Level 3

    Thuwal 23955-6900

    Kingdom of Saudi Arabia

Quick links

  • Join us
  • Contact us

© King Abdullah University of Science and Technology. All rights reserved

Privacy Policy
Terms of Use
Loading...