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Semiconductor and Material Spectroscopy Laboratory
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A Photodetector based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

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A Photodetector based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

by Tahani Hassan Flemban, Md. Azimul Haque, Idris A. Ajia, Norah Alwadai, Somak Mitra, Tom Wu, Iman Salem Roqan
Year: 2017

Bibliography

A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity, Tahani H. Flemban, Md Azimul Haque, Idris Ajia, Norah Alwadai, Somak Mitra, Tom Wu, and Iman S. Roqan, ACS Applied Materials & Interfaces (2017), accepted

Abstract

​Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current−voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W−1 ) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

DOI: 10.1021/ascami.7b09645

Keywords

Photodetectors Oxides Time-resolved Measurements Nanotubes Heterojunctions Ultraviolet Pulsed Laser Depositions
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