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Semiconductor and Material Spectroscopy Laboratory
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Domain‐Size‐Dependent Residual Stress Governs the Phase‐Transition and Photoluminescence Behavior of Methylammonium Lead Iodide

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Domain‐Size‐Dependent Residual Stress Governs the Phase‐Transition and Photoluminescence Behavior of Methylammonium Lead Iodide

by Kwang Jae Lee, Bekir Turedi, Andrea Giugni, Muhammad Naufal Lintangpradipto, Ayan A Zhumekenov, Abdullah Y Alsalloum, Jung‐Hong Min, Ibrahim Dursun, Rounak Naphade, Somak Mitra, Iman S Roqan, Boon S Ooi, Omar F Mohammed, Enzo Di Fabrizio, Namchul Cho, Osman M Bakr
Year: 2021

Abstract

Methylammonium lead iodide (MAPbI3) perovskite has garnered significant interest as a versatile material for optoelectronic applications. The temperature‐dependent photoluminescence (TDPL) and phase‐transition behaviors revealed in previous studies have become standard indicators of defects, stability, charge carrier dynamics, and device performance. However, published reports abound with examples of irregular photoluminescence and phase‐transition phenomena that are difficult to reconcile, posing major challenges in the correlation of those properties with the actual material state or with the subsequent device performance. In this paper, a unifying explanation for the seemingly inconsistent TDPL and phase‐transition (orthorhombic‐to‐tetragonal) characteristics observed for MAPbI3 is presented. By investigating MAPbI3 perovskites with varying crystalline states, ranging from polycrystal to highly …

Keywords

Domain‐Size‐Dependent Residual Stress Governs the Phase‐Transition and Photoluminescence Behavior of Methylammonium Lead Iodide
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