GaN/AlGaN multiple quantum wells grown on transparent and conductive −201-oriented β-Ga2O3 substrate for UV vertical light emitting devices

by Idris A. Ajia, Y. Yamashita, K. Lorenz, M.M. Muhammed, L. Spasevski, D. Almalawi, Jian Xu, K. Lizuka, Y. Morishima, DH Anjum, N. Wei, R.W. Martin, A. Kuramata, Iman Salem Roqan

Year: 2018

Bibliography

GaN/AlGaN multiple quantum wells grown on transparent and conductive −201-oriented β-Ga2O3 substrate for UV vertical light emitting devices, IA Ajia, Y Yamashita, K Lorenz, MM Muhammed, L Spasevski, D Almalawi, J Xu, K Iizuka, Y Morishima, DH Anjum, N Wei, RW Martin, A Kuramata, IS Roqan, Appl. Phys. Lett. 113, 082102 2018.

Keywords

III-nitride semiconductors