GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

by SA Aravindh, B Xin, S Mitra, IS Roqan, A NajarResults in Physics 19

Year: 2020

Abstract

GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

SA Aravindh, B Xin, S Mitra, IS Roqan, A NajarResults in Physics 19, 10342 (2020)

Keywords

GaN and InGaN nanowires prepared by metal-assisted electroless