In this work, indium (In) was introduced as a surfactant during growth of high temperature GaN quantum barriers (QBs) and GaN interlayer of InGaN/GaN green LEDs. A reference LED grown without In-surfactant was also included for comparison. Results suggested that the LED growth was improved by introducing the In-surfactant, especially during the growth of the GaN interlayer. The In-surfactant improved the morphology of the interlayer, hence allowed it to serve as a good surface growth for the LED. Moreover, the LED showed the lowest full width at half maximum of each x-ray diffraction satellite peak when the In-surfactant was introduced in the GaN interlayer, suggesting an effective way to improve the multi-quantum wells. The introduction of the In-surfactant in the GaN interlayer and GaN QBs growths shifted the emission wavelength of the corresponding LEDs towards red (λemission = 534 nm) with respect to the reference LED where λemission = 526 nm. Furthermore, the In-surfactant introduction reduced the forward voltage, Vf of the corresponding LEDs down to 4.56 V, compared to the reference LED with Vf of 5.33 V. It also allowed the LEDs to show faster carrier decay lifetime, and hence higher radiative recombination, particularly when it was introduced in the GaN interlayer growth.