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Semiconductor and Material Spectroscopy Laboratory
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Possible mechanism for d0 ferromagnetism mediated by intrinsic defects

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Possible mechanism for d0 ferromagnetism mediated by intrinsic defects

by Zhenkui Zhang, Udo Schwingenschloegl, Iman Salem Roqan
Year: 2014

Bibliography

​Zhenkui Zhang, Udo Schwingenschlögl and Iman S. Roqan. Possible mechanism for d0 ferromagnetism mediated by intrinsic defects. RSC Advances, 2014, 4, 50759.

Abstract

We examine the effects of several intrinsic defects on the magnetic behavior of ZnS nanostructures using hybrid density functional theory to gain insights into d0 ferromagnetism. Previous studies have predicted that the magnetism is due to a coupling between partially filled defect states. By taking into account the electronic correlations, we find an additional splitting of the defect states in Zn vacancies and thus the possibility of gaining energy by preferential filling of hole states, establishing ferromagnetism between spin polarized S 3p holes. We demonstrate a crucial role of neutral S vacancies in promoting ferromagnetism between positively charged S vacancies. S dangling bonds on the nanoparticle surface also induce ferromagnetism.

DOI: 10.1039/c4ra06237j.

Keywords

Zn vacancies ZnS Nanostructures Intrinsic Defects Density Functional Theory
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