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Semiconductor and Material Spectroscopy Laboratory
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The origin of room temperature ferromagnetism mediated by Co-VZn complexes in the ZnO grain boundary

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The origin of room temperature ferromagnetism mediated by Co-VZn complexes in the ZnO grain boundary

by Assa Aravindh Sasikalav Devi, Iman Salem Roqan
Year: 2016

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The origin of room temperature ferromagnetism mediated by Co-VZn complexes in the ZnO grain boundary, S.Assa Aravindh and Iman Roqan, RSC Advances, 2016.

Abstract

​Ferromagnetism in polycrystalline ZnO doped with Co has been observed sustainable in recent experiments. We use first-principle calculations to show that Co impurities favorably substitute at the grain boundary (GB) rather than in the bulk-like region. We reveal that room-temperature ferromagnetism (RTFM) at the Co-doped ZnO GB in the presence of Zn vacancies is due ferromagnetic exchange coupling of a pair of closely associated Co atoms in the GB, with a ferromagnetic exchange coupling energy of ~ 300 meV, which is in contrast to a previous study that suggested the O vacancy−Co complex induced ferromagnetism. Electronic structure analysis used to predict the exchange coupling mechanism, showing that the hybridization of O p states with Co and Zn d states enhances the magnetic polarization originating from the GB. Our results indicate that RTFM originates from Co clusters at interfaces or in GBs.

DOI: 10.1039/C6RA11607H

Keywords

Dilute Magnetic Semiconductor Materials Ferromagnetism ZnO
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