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Semiconductor and Material Spectroscopy Laboratory
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Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

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Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

by Aditya Prabaswara, Hyunho Kim, Jung-Wook Min, Ram Chandra Subedi, Dalaver H Anjum, Bambar Davaasuren, Kalani Moore, Michele Conroy, Somak Mitra, Iman S Roqan, Tien Khee Ng, Husam N Alshareef, Boon S Ooi
Year: 2020 DOI: https://pubs.acs.org/doi/abs/10.1021/acsnano.9b09126

Abstract

Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti3C2 MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti3C2 MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force …

Keywords

Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
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