Nanotube (NT) structures have attracted significant attention among the researchers and practitioners due to the higher aspect ratio and the fact that oxide has superior output efficiency compared to other nanostructures. Growing high quality ZnO NTs on Si substrate is a significant achievement due to its potential applications, such as converting the biological signal to electronic signal and integrating an electronic device directly to a biological environment (both of which presently remain highly challenging). In particular, researchers are not able to grow high quality vertical ZnO NTs on p-type Si. In this work, we successfully produced high structural and optical quality n-type ZnO NTs on conductive p-type Si (001) substrate by PLD, which has never been accomplished before according to our knowledge.