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Semiconductor and Material Spectroscopy Laboratory
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2021
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High pressure annealing of Europium implanted GaN
Year:
2012
Authors:
K. Lorenz, S. M. C. Miranda, E. Alves, Iman Salem Roqan, K.P. O’Donnell, M. Bockowski
GaN
Rare Earth Doping
Europium
Ion Implantation
Rutherford Backscattering Spectrometry
X-ray
Lineshape Engineering in an All-Pass Ring Resonator with Backreflection Coupled to a Symmetrical Fabry–Perot Resonator
Year:
2012
Authors:
Vasily A. Melnikov, Iman Salem Roqan
Coupled-mode theory (CMT)
Transfer functions
Resonator
The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN
Year:
2011
Authors:
K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski
Gallium Nitride
Europium
Ion Implantation
Photoluminescence
Excitation Mechanism
The pro-angiogenic properties of multi-functional bioactive glass composite scaffolds
Year:
2011
Authors:
L-C. Gerhardt, K. L. Widdows, M. M. Erol, C. W. Burch, José, A. Sanz- Herrera, I. Ochoa, R. Stämpfli, Iman Salem Roqan, S. Gabe, T. Ansari, A. R. Boccaccini
Angiogenesis
Bioactive glass
Composite scaffold
Vascular endothelial growth factor
Bone
Vascularisation
Ab initio investigation on the magnetic ordering in Gd doped ZnO
Year:
2011
Authors:
Ioannis Bantounas, Souraya Goumri-Said, Mohammed Benali Kanoun, Aure´lien Manchon, Iman Salem Roqan, Udo Schwingenschloegl
Ferromagnetism
Magnetic semiconductors
Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
Year:
2010
Authors:
K. Lorenz, E. Alves, Iman Salem Roqan, K.P. O’Donnell, A. Nishikawa, Y. Fujiwara, M. Bockowski
Photoluminescence
Doping
Light emitting diodes
III-V semiconductors
Identification of the prime optical center in GaN:Eu3+
Year:
2010
ISSN:
10
Authors:
Jjunju, Fred.P.M., Abraham.K.Badu-Tawiah, Anyin Li, And R. Graham Cooks, Iman S Roqan
Optics
GaN
Eu3+
Physics
Eu Doping of Zincblende GaN by Ion Implantation
Year:
2009
Authors:
K. Lorenz, Iman Salem Roqan, N. Franco, K.P. O’Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova
III-V semiconductors
Rutherford backscattering
X-Ray Diffraction
Cathodoluminescence
Europium
gallium compounds
Ion Implantation
Lattice constants
wide band gap semiconductors
Optical and Structural Properties of Eu-implanted InxAl1-xN
Year:
2009
Authors:
I.S. Roqan, K.P. O’Donnell, C. Trager-Cowan, V. Matias, A. Vantomme
Photoluminescence
III-V semiconductors
Ion Implantation
Linewidths
Rutherford backscattering
Structural and Optical Characterization of Eu-implanted GaN
Year:
2009
Authors:
K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski
Ion Implantation
Excitation Mechanism
Europium
Luminescence
Photoluminescence
Gallium Nitride
Photoluminescence/Excitation
PL/E
Spectroscopy
Eu-Implanted Gan
Physics
Electronic
Optical and Magnetic Materials
Atomic and Molecular Physics
Luminescence spectroscopy of Eu implanted zincblende GaN
Year:
2008
Authors:
I. S. Roqan, K. P. O’Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, M. Panfilova, D.J. As, I.M. Watson, E. Alves
Spectroscopy
Rare earth doping of III-nitride alloys by ion implantation
Year:
2008
Authors:
K. Lorenz, E. Alves, I. S. Roqan, R. W. Martin, C. Trager-Cowan, K. P. O’Donnell, and I. M. Watson
Rare earth luminescence
wide band gap
AIGaN
AllnN
GaN
The effect of growth temperature on the luminescence and structural properties of rare earth doped MBE GaN
Year:
2008
Authors:
I. S. Roqan, E. Nogales, K. P. O’Donnell, C. Trager-Cowan, R. W. Martin, G. Halambalakis, O. Briot
Atomic Force Microscopy
Molecular beam epitaxy
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
Year:
2006
Authors:
E. Nogales, K. Wang, I. S. Roqan, R.W. Martin, K.P. O'Donnell
AIN nanocaps
annealing
Characterization of the blue emission of Tm/Er co-implanted GaN
Year:
2006
Authors:
I.S. Roqan, Trager-Cowan, B. Hourahine, K. Lorenz, E. Nogales, K.P. O'Donnell, R.W. Martin, E. Alves, S. Ruffenach, O. Briot
PL
GaN
Blue cathodoluminescence from thulium implanted AlGaN and InAlN
Year:
2006
Authors:
I. S. Roqan, K. Lorenz, K.P. O’Donnell, C. Trager-Cowan, R.W. Martin, I.M. Watson, E. Alves
Rare earth
GaAIN
InAIN
Implantation
Cathodoluminescence
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