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Semiconductor and Material Spectroscopy Laboratory
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2021

  1. Publications
  • Clear filters
High pressure annealing of Europium implanted GaN
Year: 2012
Authors: K. Lorenz, S. M. C. Miranda, E. Alves, Iman Salem Roqan, K.P. O’Donnell, M. Bockowski
  • GaN
  • Rare Earth Doping
  • Europium
  • Ion Implantation
  • Rutherford Backscattering Spectrometry
  • X-ray
Lineshape Engineering in an All-Pass Ring Resonator with Backreflection Coupled to a Symmetrical Fabry–Perot Resonator
Year: 2012
Authors: Vasily A. Melnikov, Iman Salem Roqan
  • Coupled-mode theory (CMT)
  • Transfer functions
  • Resonator
The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN
Year: 2011
Authors: K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski
  • Gallium Nitride
  • Europium
  • Ion Implantation
  • Photoluminescence
  • Excitation Mechanism
The pro-angiogenic properties of multi-functional bioactive glass composite scaffolds
Year: 2011
Authors: L-C. Gerhardt, K. L. Widdows, M. M. Erol, C. W. Burch, José, A. Sanz- Herrera, I. Ochoa, R. Stämpfli, Iman Salem Roqan, S. Gabe, T. Ansari, A. R. Boccaccini
  • Angiogenesis
  • Bioactive glass
  • Composite scaffold
  • Vascular endothelial growth factor
  • Bone
  • Vascularisation
Ab initio investigation on the magnetic ordering in Gd doped ZnO
Year: 2011
Authors: Ioannis Bantounas, Souraya Goumri-Said, Mohammed Benali Kanoun, Aure´lien Manchon, Iman Salem Roqan, Udo Schwingenschloegl
  • Ferromagnetism
  • Magnetic semiconductors
Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
Year: 2010
Authors: K. Lorenz, E. Alves, Iman Salem Roqan, K.P. O’Donnell, A. Nishikawa, Y. Fujiwara, M. Bockowski
  • Photoluminescence
  • Doping
  • Light emitting diodes
  • III-V semiconductors
Identification of the prime optical center in GaN:Eu3+
Year: 2010 ISSN:10
Authors: Jjunju, Fred.P.M., Abraham.K.Badu-Tawiah, Anyin Li, And R. Graham Cooks, Iman S Roqan
  • Optics
  • GaN
  • Eu3+
  • Physics
Eu Doping of Zincblende GaN by Ion Implantation
Year: 2009
Authors: K. Lorenz, Iman Salem Roqan, N. Franco, K.P. O’Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R.W. Martin, D.J. As, M. Panfilova
  • III-V semiconductors
  • Rutherford backscattering
  • X-Ray Diffraction
  • Cathodoluminescence
  • Europium
  • gallium compounds
  • Ion Implantation
  • Lattice constants
  • wide band gap semiconductors
Optical and Structural Properties of Eu-implanted InxAl1-xN
Year: 2009
Authors: I.S. Roqan, K.P. O’Donnell, C. Trager-Cowan, V. Matias, A. Vantomme
  • Photoluminescence
  • III-V semiconductors
  • Ion Implantation
  • Linewidths
  • Rutherford backscattering
Structural and Optical Characterization of Eu-implanted GaN
Year: 2009
Authors: K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski
  • Ion Implantation
  • Excitation Mechanism
  • Europium
  • Luminescence
  • Photoluminescence
  • Gallium Nitride
  • Photoluminescence/Excitation
  • PL/E
  • Spectroscopy
  • Eu-Implanted Gan
  • Physics
  • Electronic
  • Optical and Magnetic Materials
  • Atomic and Molecular Physics
Luminescence spectroscopy of Eu implanted zincblende GaN
Year: 2008
Authors: I. S. Roqan, K. P. O’Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, M. Panfilova, D.J. As, I.M. Watson, E. Alves
  • Spectroscopy
Rare earth doping of III-nitride alloys by ion implantation
Year: 2008
Authors: K. Lorenz, E. Alves, I. S. Roqan, R. W. Martin, C. Trager-Cowan, K. P. O’Donnell, and I. M. Watson
  • Rare earth luminescence
  • wide band gap
  • AIGaN
  • AllnN
  • GaN
The effect of growth temperature on the luminescence and structural properties of rare earth doped MBE GaN
Year: 2008
Authors: I. S. Roqan, E. Nogales, K. P. O’Donnell, C. Trager-Cowan, R. W. Martin, G. Halambalakis, O. Briot
  • Atomic Force Microscopy
  • Molecular beam epitaxy
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
Year: 2006
Authors: E. Nogales, K. Wang, I. S. Roqan, R.W. Martin, K.P. O'Donnell
  • AIN nanocaps
  • annealing
Characterization of the blue emission of Tm/Er co-implanted GaN
Year: 2006
Authors: I.S. Roqan, Trager-Cowan, B. Hourahine, K. Lorenz, E. Nogales, K.P. O'Donnell, R.W. Martin, E. Alves, S. Ruffenach, O. Briot
  • PL
  • GaN
Blue cathodoluminescence from thulium implanted AlGaN and InAlN
Year: 2006
Authors: I. S. Roqan, K. Lorenz, K.P. O’Donnell, C. Trager-Cowan, R.W. Martin, I.M. Watson, E. Alves
  • Rare earth
  • GaAIN
  • InAIN
  • Implantation
  • Cathodoluminescence
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King Abdullah bin Abdulaziz Al Saud, 1924 – 2015

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