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Semiconductor and Material Spectroscopy Laboratory
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2021
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Structural and Optical Characterization of Eu-implanted GaN
Year:
2009
Authors:
K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski
Ion Implantation
Excitation Mechanism
Europium
Luminescence
Photoluminescence
Gallium Nitride
Photoluminescence/Excitation
PL/E
Spectroscopy
Eu-Implanted Gan
Physics
Electronic
Optical and Magnetic Materials
Atomic and Molecular Physics
Luminescence spectroscopy of Eu implanted zincblende GaN
Year:
2008
Authors:
I. S. Roqan, K. P. O’Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, M. Panfilova, D.J. As, I.M. Watson, E. Alves
Spectroscopy
Rare earth doping of III-nitride alloys by ion implantation
Year:
2008
Authors:
K. Lorenz, E. Alves, I. S. Roqan, R. W. Martin, C. Trager-Cowan, K. P. O’Donnell, and I. M. Watson
Rare earth luminescence
wide band gap
AIGaN
AllnN
GaN
The effect of growth temperature on the luminescence and structural properties of rare earth doped MBE GaN
Year:
2008
Authors:
I. S. Roqan, E. Nogales, K. P. O’Donnell, C. Trager-Cowan, R. W. Martin, G. Halambalakis, O. Briot
Atomic Force Microscopy
Molecular beam epitaxy
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
Year:
2006
Authors:
E. Nogales, K. Wang, I. S. Roqan, R.W. Martin, K.P. O'Donnell
AIN nanocaps
annealing
Characterization of the blue emission of Tm/Er co-implanted GaN
Year:
2006
Authors:
I.S. Roqan, Trager-Cowan, B. Hourahine, K. Lorenz, E. Nogales, K.P. O'Donnell, R.W. Martin, E. Alves, S. Ruffenach, O. Briot
PL
GaN
Blue cathodoluminescence from thulium implanted AlGaN and InAlN
Year:
2006
Authors:
I. S. Roqan, K. Lorenz, K.P. O’Donnell, C. Trager-Cowan, R.W. Martin, I.M. Watson, E. Alves
Rare earth
GaAIN
InAIN
Implantation
Cathodoluminescence
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