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Semiconductor and Material Spectroscopy Laboratory
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Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

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  2. 2021
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Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
Year: 2020 DOI:https://pubs.acs.org/doi/abs/10.1021/acsnano.9b09126
Authors: Aditya Prabaswara, Hyunho Kim, Jung-Wook Min, Ram Chandra Subedi, Dalaver H Anjum, Bambar Davaasuren, Kalani Moore, Michele Conroy, Somak Mitra, Iman S Roqan, Tien Khee Ng, Husam N Alshareef, Boon S Ooi
  • Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
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