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Semiconductor and Material Spectroscopy Laboratory
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Publications

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Structural and Optical Characterization of Eu-implanted GaN
Year: 2009
Authors: K.P. O’Donnell, Iman Salem Roqan, K. Wang, K. Lorenz, E. Alves, M. Bockowski
  • Ion Implantation
  • Excitation Mechanism
  • Europium
  • Luminescence
  • Photoluminescence
  • Gallium Nitride
  • Photoluminescence/Excitation
  • PL/E
  • Spectroscopy
  • Eu-Implanted Gan
  • Physics
  • Electronic
  • Optical and Magnetic Materials
  • Atomic and Molecular Physics
Luminescence spectroscopy of Eu implanted zincblende GaN
Year: 2008
Authors: I. S. Roqan, K. P. O’Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, M. Panfilova, D.J. As, I.M. Watson, E. Alves
  • Spectroscopy
Rare earth doping of III-nitride alloys by ion implantation
Year: 2008
Authors: K. Lorenz, E. Alves, I. S. Roqan, R. W. Martin, C. Trager-Cowan, K. P. O’Donnell, and I. M. Watson
  • Rare earth luminescence
  • wide band gap
  • AIGaN
  • AllnN
  • GaN
The effect of growth temperature on the luminescence and structural properties of rare earth doped MBE GaN
Year: 2008
Authors: I. S. Roqan, E. Nogales, K. P. O’Donnell, C. Trager-Cowan, R. W. Martin, G. Halambalakis, O. Briot
  • Atomic Force Microscopy
  • Molecular beam epitaxy
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
Year: 2006
Authors: E. Nogales, K. Wang, I. S. Roqan, R.W. Martin, K.P. O'Donnell
  • AIN nanocaps
  • annealing
Characterization of the blue emission of Tm/Er co-implanted GaN
Year: 2006
Authors: I.S. Roqan, Trager-Cowan, B. Hourahine, K. Lorenz, E. Nogales, K.P. O'Donnell, R.W. Martin, E. Alves, S. Ruffenach, O. Briot
  • PL
  • GaN
Blue cathodoluminescence from thulium implanted AlGaN and InAlN
Year: 2006
Authors: I. S. Roqan, K. Lorenz, K.P. O’Donnell, C. Trager-Cowan, R.W. Martin, I.M. Watson, E. Alves
  • Rare earth
  • GaAIN
  • InAIN
  • Implantation
  • Cathodoluminescence
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King Abdullah bin Abdulaziz Al Saud, 1924 – 2015

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